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Ultrawide bandgap gives material high-power potential

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The collaboration was led by co-senior authors Debdeep Jena and Huili Grace Xing, both professors in electrical and computer engineering and in materials science and engineering. The team also included David Muller, the Samuel B. Eckert Professor in Applied and Engineering Physics, who specializes in electron microscopy, and Darrell Schlom, the Herbert Fisk Johnson Professor of Industrial Chemistry, who grows oxide materials for electronic uses.

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The image at left shows the energy bandgap of alpha-aluminum gallium oxide compared to similar materials, and the effect of replacing gallium atoms with aluminum. The image on the right is an overview of alpha-aluminum gallium oxide grown on a substrate of sapphire.